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RF2125P high power linear amplifier qty 5


RF2125P High Power Linear Amplifier by RF Micro Devices
Description: The RF2125P is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in digital PCS phone transmitters and base stations requiring linear amplification operating between 1500MHz and 2200MHz. It will also function as a high efficiency amplifier for constant envelope applications such as DECT. The device is packaged in an 8-lead plastic package with a backside ground. The device is self-contained with the exception of the output matching network and power supply feed line. It produces a typical output power level of 1W.
* Single 2.7V to 7.5V Power Supply
* 1500MHz to 2200MHz Operation



RF2125P high power linear amplifier qty 5